SAN CARLOS, Calif. — Sept. 18, 2013 — Alliance Memory today introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1).
The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR1 SDRAMs operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb) and halogen free.
The AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 feature a fast clock rate of 200 MHz, a commercial temperature range of 0 °C to 70 °C, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The DDR1 SDRAM's provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
|Part Number ||AS4C4M16D1 ||AS4C8M16D1 ||AS4C16M16D1 ||AS4C32M16D1 |
|Density ||64 Mb ||128 Mb ||256 Mb ||512 Mb |
|Configuration ||4M x 16 bit ||8M x 16 bit ||16M x 16 bit ||32M x 16 bit |
|Clock Rate ||200 MHz ||200 MHz ||200MHz ||200 MHz |
|Date Rate ||400 Mbps/pin ||400 Mbps/pin ||400 Mbps/pin ||400 Mbps/pin |
|Package ||66-pin TSOP II ||66-pin TSOP II ||66-pin TSOP II ||66-pin TSOP II |
Samples and production quantities of the new (all available now) AS4C16M16D1 and
AS4C32M16D are available now, with lead times of eight weeks. The AS4C4M16D1 and AS4C8M16D1 will be available in July. Pricing ranges from $0.85 to $1.60 per piece.