Alliance Memory Introduces New High-Speed CMOS Double Data Rate (DDR1) Synchronous DRAMs With 64-Mb,

SAN CARLOS, Calif. — Sept. 18, 2013 — Alliance Memory today introduced a new line of high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64 Mb (AS4C4M16D1), 128 Mb (AS4C8M16D1), 256 Mb (AS4C16M16D1), and 512 Mb (AS4C32M16D1).

The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR1 SDRAMs operate from a single +2.5-V (± 0.2 V) power supply, and are lead (Pb) and halogen free.

The AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 feature a fast clock rate of 200 MHz, a commercial temperature range of 0 °C to 70 °C, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The DDR1 SDRAM's provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Part Number AS4C4M16D1 AS4C8M16D1 AS4C16M16D1 AS4C32M16D1
Density 64 Mb 128 Mb 256 Mb 512 Mb
Configuration 4M x 16 bit 8M x 16 bit 16M x 16 bit 32M x 16 bit
Clock Rate 200 MHz 200 MHz 200MHz 200 MHz
Date Rate 400 Mbps/pin 400 Mbps/pin 400 Mbps/pin 400 Mbps/pin
Package 66-pin TSOP II 66-pin TSOP II 66-pin TSOP II 66-pin TSOP II


Samples and production quantities of the new (all available now) AS4C16M16D1 and

AS4C32M16D are available now, with lead times of eight weeks. The AS4C4M16D1 and AS4C8M16D1 will be available in July. Pricing ranges from $0.85 to $1.60 per piece.